DESCRIPTION
GE DS200IIBDG1A
The GE DS200IIBDG1A Insulated Gate Bipolar Transistor (IGBT) Board is a high-power electronic component designed to efficiently control large currents.
IGBTs are a combination of a MOSFET and a bipolar junction transistor, offering the best of both worlds in terms of fast switching speeds and high current handling capabilities. This specific model, the DS200IIBDG1A, is likely a high-voltage, high-current IGBT suitable for applications such as motor drives, power supplies, and industrial control systems.
Key features and specifications:
1. High voltage rating: Capable of handling high voltage levels, ensuring efficient power control.
2. High current capability: Can conduct large currents, making it suitable for demanding applications.
3. Fast switching speeds: Offers quick switching times, enabling precise control and high-frequency operation.
4. Insulated gate: Provides electrical isolation between the control signal and the power circuit, enhancing safety and reliability.
5. Bipolar junction transistor structure: Combines the advantages of both MOSFETs and bipolar transistors for optimal performance.
6. Board mounting: Designed for easy integration into electronic circuits through board-level mounting.
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GE Company
GE Fanuc was a joint venture between General Electric (GE) and FANUC that existed from 1986 to 2009. The company specialized in industrial automation products, including programmable logic controllers (PLCs), human-machine interfaces (HMIs), and SCADA systems.
1. Programmable logic controllers (PLCs)
2. Industrial robots
3. CNC controls
4. Motion control systems
5. Human-machine interfaces (HMIs)
6. Industrial software
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