Technology Type:IGBT
Module Size:FF300R12KE3-B2
Rated Current (A):1200
Switching Frequency (kHz):300
Package Type:Metal Oxide Semiconductor Field-Effect Transistor (MOSFET)
Operating Temperature Range (-°C to +°C):-40°C to +175°C
Cooling Method:Thermal Pad with Heat Sink
Input Voltage Range (Vdc):1000Vdc
Output Voltage Range (Vac):Up to 380Vac
Power Handling Capacity (kW):150
Innovative design ensures superior thermal management, providing reliable operation under extreme conditions.
High switching frequency allows for reduced size and weight, enhancing system compactness without compromising performance.
Robust construction with advanced semiconductor materials ensures long lifespan and durability, making it ideal for demanding industrial environments.
Comprehensive compatibility with various control systems facilitates easy integration into existing setups, streamlining the installation process.
Energy-efficient design optimizes power consumption, contributing to lower operational costs and environmental sustainability.
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