Product description
The ABB 5SHY3545L0014 IGCT module is a single-phase, three-level module with a rated voltage of 6500 V and a rated current of 1500 A. The module contains two IGCTs, one diode, and all necessary gate drive and protection circuitry.
Product parameters
- Rated voltage: 6500 V
- Rated current: 1500 A
- Turn-on time: 1.5 μs
- Turn-off time: 2.5 μs
- Gate voltage: ±15 V
- Gate current: 2 A
- Operating temperature range: -40 °C to +125 °C
The Integrated Gate-Commutated Thyristor (IGCT) was introduced about 15 years ago and
has established itself as a preferred solution for a number of high power electronics applications. These applications have in common that the rated power level is in the megawatts (MW) and they range from industrial drives and track-side supplies to power quality and high-current breakers. In this article we highlight the features making the IGCT so attractive for high power applications and we discuss the developments that will further strengthen the
IGCT’s advantages in high power applications.
ABB offers two different types of IGCTs: the asymmetric and the reverse conducting (RC).
The asymmetric IGCT offers highest power levels. It is available as standard asymmetric
IGCT and as the newer HPT-IGCT with improved turn-off capability. Applying asymmetric
IGCTs allows choosing optimized free-wheel diodes as for instances ABBs new IGCT diodes
If you find the same parts from any other suppliers cheaper than us, we will try to match that the same price, or provide you with a further discount.
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